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Reliability concern of quasi-vertical GaN Schottky barrier diode under high temperature reverse bias stress
Sheng Li a, Chi Zhang a, Siyang Liu a, Jiaxing Wei a, Long Zhang a, Weifeng Sun a,*,
Youhua Zhu b, Tingting Zhang c, Dongsheng Wang c, Yinxia Sun c
a National ASIC System Engineering Research Center, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China
b School of Electronics and Information, Nantong University, Nantong, 226019, China
c CorEnergy Semiconductor Co., LTD, Zhangjiagang, 215600, China
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Integrated GaN MIS-HEMT with Multi-Channel Heterojunction SBD Structures
Sheng Li, Siyang Liu, Chi Zhang, Jiaxing Wei, Long Zhang, Weifeng Sun* National ASIC System Engineering Research Center Southeast University Nanjing, China
Youhua Zhu, Tingting Zhang, Dongsheng Wang, Yinxia Sun, Yiheng Li, Tinggang Zhu CorEnergy Semiconductor Co., LTD Zhangjiagang, China
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Investigations of the gate instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs
To cite this article: Changkun Zeng et al 2019 Appl. Phys. Express 12 121005
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Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate
To cite this article: Yuanyang Xia et al 2020 Mater. Res. Express 7 065902
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Investigations of the gate-instability characteristics in Schottky/ohmic type p-Gan gate normally-off AIGan/Gan HEMTs
Changkun Zeng,Weizong Xu,Yuanyang Xia,Danfeng Pan,Yiwang Wang,Qiang Wang,Youhua Zhu,Fangfang Ren,Dong ZHou,Jiandong Ye,Dunjun Chen,Rong Zhang,Youdou Zheng,and Hai Lu
2019 The Japan Society of Applied Physics
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Effects of the cap layer on the properties of ALN barrier HEMT grown on 6-inch Si(111) substrate
Yuanyang Xia,Youhua Zhu,Chunhua Liu,Hongyuan Wei,Tingting Zhang,YeehengLee,TinggangZhu,Meiyu wang,Li Yi and MeiGe
IOP Publishing Mater.Res.Express 7(2020)065902
