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application/pdfIEEE2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD);2019; ; ; reverse conductionintegrated structuresmulti-channelIntegrated GaN MIS-HEMT with Multi-Channel Heterojunction SBD StructuresSheng LiSiyang LiuChi ZhangJiaxing WeiLong ZhangWeifeng SunYouhua ZhuTingting ZhangDongsheng WangYinxia SunYiheng LiTinggang Zhu
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)447 May 2019450
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