2020 Jiangsu Province Key R&D Plan

Project name: Research on High Quality Gallium Nitride Epitaxial Growth on 6-inch Silicon Carbide for 5G Communication Applications

Project time: 2020

2018 Jiangsu Province Key R&D Plan

Project name: Research and development of key technologies for the preparation and application of sapphire-based high-reliability GaN-HEMT devices

Project time: 2018

Solved problems, benefits and significance:

Developed high-reliability sapphire-based enhanced GaN-HEMT devices that meet the needs of applications such as smart home appliances and new energy vehicles.

2018 Jiangsu Province Key R&D Plan

Project name: Development and application of key technologies for large-size, high-quality gallium oxide ultra-wide bandgap power semiconductor materials

Project time: 2018

Solved problems, benefits and significance:

Key breakthroughs have been made in material epitaxy technology and large-scale manufacturing processes, and high-quality, large-size, low-cost Ga2O3 epitaxial wafers that meet the requirements of power electronic devices have been obtained, which is a development and development in the field of advanced power semiconductors and power electronic devices in China. Practicality provides technical support.

2017 National Key R&D Program Strategic Advanced Electronic Materials Key Special Project

Project name: Key Technology of New GaN-based Power Electronic Devices Topic Avalanche breakdown effect and new withstand voltage structure of GaN-based power devices

Project time: 2017

Solved problems, benefits and significance:

The withstand voltage level of GaN-based devices has achieved a breakthrough, reaching the international advanced level, clarifying the stability of GaN-based devices, and finding ways to improve device stability; trying to apply GaN-based devices in power supplies to lay the foundation for popularization.

2016 Jiangsu Province Key R&D Plan

Project name: Research and development of common key technologies for high-performance enhanced Si-based GaN power switching devices

Project time: 2016

Solved problems, benefits and significance:

Combining with the country’s development needs in energy conservation, emission reduction, and efficient use of energy, with the goal of achieving high-performance enhanced Si-based GaN power switching devices, the research and development of related common key technologies will be carried out to achieve related technological breakthroughs and Industrial development.