2015 national project-863 Program.

Project name: Key Technologies for Fabrication of GaN Power Electronic Devices on Sapphire Substrate

Project time: 2015

Solved problems, benefits and significance:

In response to China’s major needs for GaN power electronic devices in energy conservation and emission reduction, modern information engineering, and modern national defense construction, research and development of GaN power electronic devices based on sapphire substrates, and develop new technologies for low-cost, highly reliable, and integrable GaN power electronic devices .

2015 National Development and Reform Commission Special Project

Project name: Industrialization of high-power GaN electronic devices and materials

Project time: 2015

Solved problems, benefits and significance:

In response to the foreign monopoly on my country's GaN semiconductor materials, it creates profits and taxes and increases employment.

2013 Provincial International Science and Technology Cooperation Project

Project name: Application Research of New MO Source to Improve the Performance of GaN High Power Devices

Project time: 2013